Infineon Unveils GaN Technology Outlook for 2026: Innovations Driving Rapid Growth in Power Semiconductor Sector

Infineon Technologies has released its 2026 GaN Technology Outlook, highlighting that technological innovations are driving significant growth in the power semiconductor sector for gallium nitride (GaN). By 2030, the GaN market is projected to reach $3 billion, with a remarkable compound annual growth rate (CAGR) of 44%.

Infineon’s high-voltage GaN bidirectional switch features a revolutionary common-source design and dual-gate structure. GaN power semiconductors are expanding into emerging markets such as AI, robotics, and quantum computing.

On February 10, 2026, in Munich, Germany, Infineon announced that the growing adoption of GaN power solutions is leading to a major transformation in the power electronics industry. The company, a global leader in semiconductors for power systems and IoT, provided an in-depth analysis of the current state, application scenarios, and future prospects of GaN technology in its 2026 GaN Technology Outlook, serving as an important reference for the industry.

Johannes Schoiswohl, head of Infineon’s GaN systems business line, said, “GaN has become a tangible market application, gaining widespread attention across multiple industries. Infineon is dedicated to rapidly and efficiently creating value for our customers. With our ‘from product to system’ solutions, leading manufacturing capabilities, and extensive GaN product portfolio, we are enabling our customers to achieve success in the market. We will continue our efforts to maintain Infineon’s position as a trusted partner, helping customers meet the challenges posed by GaN technology and fully unlock its potential.”

Leveraging 300mm GaN wafer manufacturing technology, Infineon’s GaN products offer exceptional performance, providing significant advantages across various applications. Analysts predict that the GaN power semiconductor market could approach $3 billion by 2030, representing a 400% growth compared to the market size in 2025. This rapid growth is attributed to large-scale capacity expansions initiated in 2025, which have facilitated the widespread adoption of GaN technology across multiple industries and fostered its penetration into new sectors.

From 2025 to 2030, the market is expected to experience a CAGR of 44%, with revenues anticipated to reach $920 million in 2026, marking a 58% increase from 2025.

By 2026, designers are expected to discover new applications for GaN bidirectional switches (BDS) beyond solar inverters and electric vehicle (EV) onboard chargers. Infineon’s high-voltage GaN bidirectional switches utilize a groundbreaking common-source design and dual-gate structure based on mature gate injection transistor (GIT) technology. This unique architecture allows for bidirectional voltage blocking in the same drift region, significantly reducing chip area compared to traditional back-to-back configurations. For example, Infineon’s CoolGaN™ BDS, which supports a maximum switching frequency of 1 MHz, increases power output by 40% for solar micro-inverters of the same size while reducing system costs.

GaN technology is also expanding into new application fields, including AI data centers, robotics, electric vehicles, renewable energy, digital health, and quantum computing. In the data center market, GaN power supplies with new topologies achieve unprecedented efficiency and power density, reducing power consumption by up to 30%, thus enabling more efficient and compact data center architectures. In humanoid robotics, GaN motor drives can reduce size by 40% while enhancing control over fine movements.

Why choose Infineon’s GaN technology? Infineon is a global leader in power semiconductors, known for its innovative solutions in silicon (Si), silicon carbide (SiC), and GaN. The company utilizes a vertical integration manufacturing (IDM) strategy combined with industry-leading system understanding to provide various advanced technologies that meet the evolving demands of the industry. Infineon’s GaN products are exceptional due to their 300mm GaN wafer manufacturing technology, offering significant advantages for various applications. For instance:

• The new CoolGaN™ 650V G5 transistor series leads the industry with a quality factor (the product of conduction loss and switching loss) that enhances system performance and design flexibility by 30-40%.
• Infineon’s innovative CoolGaN™ Transistor MV G5 series integrates Schottky diodes within the device, reducing losses by 15% and lowering device temperature by more than 10%, enhancing efficiency and reliability while reducing size and cost.
• Infineon’s new CoolGaN™ 100V automotive-grade transistor series solidifies its position as a leader in automotive semiconductors, meeting the stringent requirements of AEC-Q101 standard to assist customers transitioning from 12V to 48V systems in the next generation of automotive architectures.

With over 50 GaN products in its extensive portfolio, Infineon covers discrete and highly integrated solutions across voltage ranges from 40V to 700V, addressing applications in consumer electronics, industrial electronics, and automotive electronics to provide a wide array of solutions for various power applications.

By 2026, GaN technology is expected to see further applications in the power electronics industry, thanks to its outstanding performance, efficiency, and reliability. As a market leader in GaN technology, Infineon is committed to empowering customers and partners in exploring this new field and collaboratively developing energy-efficient technologies for the future.

For more information, the electronic version of the 2026 GaN Technology Outlook is now available on the Infineon website, offering an in-depth exploration of GaN technology’s current developments, product positioning, application scenarios, and future opportunities and challenges. Click here to download.

About Infineon
Infineon Technologies AG is a global leader in semiconductors for power systems and IoT, driving the low-carbon and digital transformation with its products and solutions. The company employs approximately 57,000 people worldwide as of September 2025 and reported revenue of approximately €14.7 billion for the 2025 fiscal year. Infineon is listed on the Frankfurt Stock Exchange (stock code: IFX) and on the OTCQX International market in the USA (stock code: IFNNY).

Infineon in China
Infineon Technologies AG officially entered the mainland Chinese market in 1995. Since establishing its first enterprise in Wuxi in October 1995, Infineon has experienced rapid growth in China, employing over 3,000 people and becoming a significant driving force for Infineon’s global business development. Infineon has built a complete industry chain in China, covering production, sales, marketing, and technical support, while collaborating deeply with leading domestic companies and universities in sales, technical application support, and talent development.