Huawei Digital Energy Technology Co., Ltd. has been granted a patent for a semiconductor power module and power electronic device, which reduces the likelihood of cracks at the solder joints. According to information from the National Intellectual Property Administration, the patent, titled “Semiconductor Power Module and Power Electronic Device,” was officially announced under the publication number CN222813596U and was applied for on February 2024.
The patent abstract indicates that the implementation of this technology involves a semiconductor power module, which includes power chips, a packaging body, and a first pin. The packaging body is designed to encapsulate the power chip and consists of a top surface and a bottom surface that are configured back-to-back in the thickness direction. The first pin features a connected first section and a second section, where the first section extends from one side of the packaging body outward, and the second section is positioned on the side of the first section that is away from the top surface, slanting toward the packaging body from the junction of the two sections. This design allows the first pin to absorb stress at the solder joints through deformation, significantly reducing the risk of cracks and ensuring stable operation of the semiconductor power module after installation.
As per data from Tianyancha, Huawei Digital Energy Technology Co., Ltd. was established in 2021 and is based in Shenzhen. The company primarily focuses on technology promotion and application services and has a registered capital of 3 billion RMB. The company has invested in four enterprises, participated in 149 bidding projects, and has 83 trademark registrations along with 4099 patent records. Additionally, it holds 9 administrative licenses.
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